Edited by: Jyotirmay Banerjee and K. Muralidhar

A mathematical model that explores the basic transport phenomena in a Czochralski process, their interaction and influence on the growth of high quality oxide crystals are presented. Steady state simulation has been carried out for the full Czochralski

A mathematical model that explores the basic transport phenomena in a Czochralski process, their interaction and influence on the growth of high quality oxide crystals is presented. Steady state simulation has been carried out for the full Czochralski domain including the melt, crystal and gas within the enclosure. The numerical code has been modified to simulate continuous growth of a YAG crystal under quasi-steady conditions, by taking into account the increase in crystal height and a reduction in the melt volume. Experiments using liquid crystal thermography have been conducted to study the interaction between buoyancy and crystal rotation, as well as for validating the computer codes. 
Dr J. Banerjee received his Ph.D. from Indian Institute of Technology Kanpur, India. Dr. K. Muralidhar is a professor and the head of the department of mechanical engineering, Indian Institute of Technology Kanpur, India. He is a Fellow of the Indian National Academy of Engineering. Earlier, he published the books: "Computational Fluid Flow and Heat Transfer" and "Advanced Engineering Fluid Mechanics". 

Hardcover. 260 pages. © 2007. ISBN: ISBN-10: 0-9717880-4-9 ISBN-13: 978-0-9717880-4-6.